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SI4833DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) -30 rDS(on) (W) 0.085 @ VGS = -10 V 0.180 @ VGS = -4.5 V ID (A) "3.5 "2.5 SCHOTTKY PRODUCT SUMMARY VKA (V) 30 VF (V) Diode Forward Voltage 0.5 V @ 1.0 A IF (A) 1.4 S K SO-8 A A 1 2 3 4 Top View 8 7 6 5 K K D D D A G S G ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a, b 150 C) Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a, b Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a, b Maximum Power Dissipation (Schottky)a, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C TJ, Tstg PD TA = 25_C TA = 70_C Symbol VDS VKA VGS ID IDM IS IF IFM Limit -30 30 "20 "3.5 "2.8 "20 - 1.7 1.4 30 2 1.3 1.9 1.2 -55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (t v 10 sec)a Device MOSFET Schottky MOSFET Schottky Symbol Typical Maximum 62.5 65 Unit RthJA Maximum Junction-to-Ambient (t = steady state)a 90 92 _C/W Notes a. Surface Mounted on FR4 Board. b. t v 10 sec. Document Number: 70796 S-56941--Rev. B, 02-Nov-98 www.vishay.com S FaxBack 408-970-5600 2-1 SI4833DY Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -30 V, VGS = 0 V VDS = -30 V, VGS = 0 V, TJ = 55_C VDS w -5 V, VGS = -10 V VGS = -10 V, ID = -2.5 A VGS = -4.5 V, ID = -1.8 A VDS = -10 V, ID = -2.5 A IS = -1.7 A, VGS = 0 V -15 0.066 0.125 5.0 -0.8 -1.2 0.085 0.180 W S V -1.0 "100 -1 -25 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -1.7 A, di/dt = 100 A/ms VDD = -10 V, RL = 10 W 10 V, ID ^ -1 A, VGEN = -10 V RG = 6 W 1A 10 V, VDS = -10 V VGS = -10 V ID = -2.5 A 10 V, 10 V, 25 8.7 1.9 1.3 7 9 14 8 50 15 18 27 15 80 ns 15 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Forward Voltage Drop Symbol VF Test Condition IF = 1.0 A IF = 1.0 A, TJ = 125_C Vr = 30 V Min Typ 0.45 0.36 0.004 0.7 3.0 62 Max 0.5 Unit V 0.42 0.100 10 20 pF mA A Maximum R Reverse Leakage Current Mi Lk C Irm Vr = 30 V, TJ = 100_C Vr = -30 V, TJ = 125_C Junction Capacitance CT Vr = 10 V www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70796 S-56941--Rev. B, 02-Nov-98 SI4833DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 10, 9, 8, 7, 6 V 16 I D - Drain Current (A) I D - Drain Current (A) 5V 12 16 20 TC = -55_C 25_C 125_C 12 MOSFET Transfer Characteristics 8 4V 4 3V 0 0 2 4 6 8 8 4 0 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.40 700 600 r DS(on) - On-Resistance ( W ) 0.32 C - Capacitance (pF) 500 400 300 Capacitance Ciss 0.24 VGS = 4.5 V 0.16 VGS = 10 V 0.08 Coss 200 100 Crss 0 0 3 6 9 12 15 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 2.5 A Gate Charge 2.0 1.8 r DS(on) - On-Resistance ( W) (Normalized) 1.6 1.4 1.2 1.0 0.8 0.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 2.5 A 8 6 4 2 0 0 2 4 6 8 10 0.4 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 70796 S-56941--Rev. B, 02-Nov-98 www.vishay.com S FaxBack 408-970-5600 2-3 SI4833DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.5 MOSFET On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 10 r DS(on) - On-Resistance ( W ) 0.4 0.3 TJ = 150_C TJ = 25_C 0.2 ID = 2.5 A 0.1 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.8 ID = 250 mA 28 35 Single Pulse Power 0.6 V GS(th) Variance (V) 0.4 Power (W) 21 0.2 14 0.0 7 -0.2 -0.4 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 Time (sec) 1 10 30 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 90_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 10-2 10-1 1 4. Surface Mounted 10 100 600 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70796 S-56941--Rev. B, 02-Nov-98 SI4833DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Reverse Current vs. Junction Temperature 20 10 I R - Reverse Current (mA) 3 SCHOTTKY Forward Voltage Drop I F - Forward Current (A) 1 1 TJ = 150_C 0.1 20 V 0.01 30 V 10 V 0.1 TJ = 25_C 0.001 0.0001 0 25 50 75 100 125 150 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 TJ - Junction Temperature (_C) VF - Forward Voltage Drop (V) 250 Capacitance CT - Junction Capacitance (pF) 200 150 100 50 0 0 4 8 12 16 20 VKA - Reverse Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 0.02 PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 92_C/W t1 t2 Single Pulse 0.01 10-4 10-3 10-2 10-1 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 1 10 100 600 Square Wave Pulse Duration (sec) Document Number: 70796 S-56941--Rev. B, 02-Nov-98 www.vishay.com S FaxBack 408-970-5600 2-5 |
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